论文题目:An 11-bit 250MS/s subrange-SAR ADC in 40nm CMOS
作者:Shushu Wei, Xian Gu, Fule Li, Zhihua Wang
期刊:ISNE 2016
年份:2016.3-6 May
卷(期)及页码:pp. 1 - 2
摘要:
The subrange SAR ADC in this paper consists of coarse
conversions of 4-bit flash ADC and fine conversions of 8-bit
SAR ADC, which fully combines high speed of flash ADC and
low power consumption of SAR ADC. The design is fabricated
in a 40nm low-leakage process, and the core area is 0.018mm.
The post layout simulation achieves an ENOB of 9.99 bits at
Nyquist input and consumes 1.5mW from 1.1V supply, leading
This paper presents an 11-bit 250MS/s subrange SAR ADC.
The subrange SAR ADC in this paper consists of coarse
conversions of 4-bit flash ADC and fine conversions of 8-bit
SAR ADC, which fully combines high speed of flash ADC and
low power consumption of SAR ADC. The design is fabricated
in a 40nm low-leakage process, and the core area is 0.018mm
. The post layout simulation achieves an ENOB of 9.99 bits at
Nyquist input and consumes 1.5mW from 1.1V supply, leading
to a FOM of 5.86fJ/conv-step.