论文题目：A Study of Process/Device/Layout Co-Design for Full-Chip ESD Protection in BCD Technology
作者：Rui Zhu, Fei Yao, Shijun Wang, Albert Wang, Liji Wu, Xiangming Zhang, Baoyong Chi
期刊：ICSICT 2012
年份：2012.29 Oct.-1 Nov.
卷（期）及页码：pp. 1 - 3
摘要：
A study of process-device-layout co-design procedure for full-chip electrostatic discharge (ESD) protection design for high-voltage (HV) ICs in a Bipolar-CMOS- DMOS (BCD) technology is reported. The full-chip ESD protection scheme includes I/O and power clamp ESD protection. Co-design using mixed-mode TCAD ESD simulation technique ensures design optimization and prediction. Test result confirms full-chip ESD protection of at least 4.5KV.