The 0.1-4GHz reconfigurable multi-band low-noise amplifiers (LNAs) based on active feedback topology with resistive and switched inductor loads is presented. Techniques include active feedback through a source follower, and frequency tuning conducted by a 2-tap switched inductor. Two LNAs were fabricated in TSMC 65nm CMOS process. The chips were tested on board using chip-on-board packages. The LNAs cover most of the frequency range for SDR applications. A mimimum noise figure (NF) of 2.4dB at 1.8GHz and an input referred linearity IIP3 of -1dBm at 900MHz in low gain mode are achieved. The LNA draws 11mA from the 1.2V supply. The die area of the LNA array is 0.369 mm2.