This paper presents a wideband low-noise amplifier with flat in-band gain for 6-10 GHz ultra-wideband high data rate communication application. The embedded capacitive feedback technique is proposed to suppress the current dissipation and noise factor of the input transistor without additional power consumption. The proposed RC extension network provides an extra effective pole to realize wideband flat gain. Fabricated in 65nm CMOS, the LNA achieves a power gain of 12.2-13.1dB across 6-10GHz with ±0.45dB in-band gain variation and 4.3-5.7dB NF. It consumes 3.4mW from a 1.2V supply and occupies a compact die area of 0.094 mm2.