论文题目:A 65nm 110GOPS 8T-SRAM Computing-in-Memory Macro with Single Cycle Serial Input Mechanism
作者:Shumeng Li, Tianqi Xu, Fukun Su, Xian Tang, Yupeng Chen
期刊:ICCS 2022
年份:2022.23-26 Sept.
卷(期)及页码:pp.33-37
摘要:
This paper presents a high-speed 8T-SRAM computing-in-memory (CIM) macro, which adopts a novel single cycle serial input (SCSI) mechanism and a matching weighted capacitor register circuit, achieving excellent input linearity and calculation speed without input DACs. The register capacitor arrays can be reused by the output SAR ADCs as their four most significant bits (MSBs) DAC capacitors, further improving the area efficiency. The 4kb 8T-SRAM macro supports 4-bit input, 4-bit weight, and 6-bit output, it executes 16 columns of 4b×4b MAC in parallel, achieving peak throughput of 110.1 GOPS and energy efficiency of 31.4 TOPS/W in 65nm CMOS process.